RT info:eu-repo/semantics/article
T1 Anisotropy and Mechanistic Elucidation of Wet-Chemical Gallium Nitride Etching at the Atomic Level
A1 Tautz, Markus
A1 Weimar, Andreas
A1 Graßl, Christian
A1 Welzel, Martin
A1 Díaz Díaz, David
K1 anisotropy
K1 etching
K1 gallium nitride
K1 light-emitting diodes
K1 mechanism
K1 anisotropía
K1 nitruro de galio
K1 diodos emisores de luz
K1 mecanismo
AB Etching of gallium nitride is a key step in the production of blue and whitelight-emitting diodes (LEDs). Etching in aqueous KOH solution creates a roughsurface on the LED chip to facilitate outcoupling of the photons generated,drastically increasing the resulting LED’s efficiency. Compared with the commontechnique of dry etching, wet-chemical etching using aqueous KOH solutionhas significant advantages, e.g., lower complexity and cost and less remainingsurface damage. An in-depth analysis of the molecular etch reaction by characterizationof the reaction products is reported. The mechanism identifiedexplains the cause of anisotropic etching, which leads to the formation ofhexagonal pyramids. The concept of hydroxide repulsion by protruding NHand NH2 groups established in the literature is adapted and further developed.The susceptibility of several polar, semipolar, and nonpolar crystal facets mayalso be explained, as well as the commonly observed increase in average pyramidsize over etch time.
PB Wiley
YR 2020
FD 2020
LK http://riull.ull.es/xmlui/handle/915/21464
UL http://riull.ull.es/xmlui/handle/915/21464
LA en
NO OSRAM Opto Semiconductors GmbH
DS Repositorio institucional de la Universidad de La Laguna
RD 02-may-2024