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dc.contributor.authorHernández Rodríguez, Cecilio 
dc.contributor.authorDíaz Herrera, B.
dc.contributor.authorJiménez-Rodriguez, E.
dc.contributor.authorGonzález Díaz, B.
dc.contributor.authorRinio, M.
dc.contributor.authorBorcher, D.
dc.contributor.authorGuerrero Lemus, Ricardo 
dc.contributor.otherFísica
dc.contributor.otherEnergías Renovables y Óptica
dc.date.accessioned2025-02-03T21:05:13Z
dc.date.available2025-02-03T21:05:13Z
dc.date.issued2009
dc.identifier.urihttp://riull.ull.es/xmlui/handle/915/41420
dc.description24th EUPVSEC, 2009, 1934-1936
dc.description.abstractThis paper discusses the gettering process during emitter diffusion in upgraded metallurgical grade (UMG) silicon and the effect of a subsequent low temperature annealing (LTA) which is proven to be a suitable method to increase the cell lifetime and efficiency according to recent studies from other authors. Neighboring wafers of the same ingot were selected to be processed and characterized by means of μW-PCD lifetime measurements. An increase in minority carrier lifetime by a factor of 3.8 is obtained after the phosphorus gettering, although no improvement due to the LTA process in these wafers was observed.en
dc.format.mimetypeapplication/pdf
dc.language.isoen
dc.rightsLicencia Creative Commons (Reconocimiento-No comercial-Sin obras derivadas 4.0 Internacional)
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/deed.es_ES
dc.titleUpgraded metallurgical grade Silicon for Solar Cell fabrication
dc.typeinfo:eu-repo/semantics/conferenceObject
dc.subject.keywordUMG, Silicon, Gettering, Diffusion, Annealing, Solar cellsen


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Licencia Creative Commons (Reconocimiento-No comercial-Sin obras derivadas 4.0 Internacional)
Except where otherwise noted, this item's license is described as Licencia Creative Commons (Reconocimiento-No comercial-Sin obras derivadas 4.0 Internacional)