RT info:eu-repo/semantics/article
T1 Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES
A1 Tautz, Markus
A1 Kuchenbrod, Maren T.
A1 Hertkorn, Joachim
A1 Weinberger, Robert
A1 Welzel, Martin
A1 Pfitzner, Arno
A1 Díaz Díaz, David
K1 etching
K1 GaN
K1 ICP-OES
K1 KOH
K1 LED
AB Roughening by anisotropic etching of N-face gallium nitride is the key aspect in today’s production of blue and white light emittingdiodes (LEDs). Both surface area and number of surface angles are increased, facilitating light outcoupling from the LED chip.The structure of a GaN layer stack grown by metal organic chemical vapour deposition (MOCVD) was varied in the unintentionallydoped u-GaN bulk region. Different sequences of 2D and 3D grown layers led to a variation in dislocation density, which wasmonitored by photoluminescence microscopy (PLM) and X-ray diffraction (XRD). Thin-film processing including laser lift off(LLO) was applied. The influence of epitaxial changes on the N-face etch kinetics was determined in aqueous KOH solution atelevated temperature. Inductively-coupled plasma optical emission spectroscopy (ICP-OES) was used to measure the etch progressin small time increments with high precision. Thereby, the disadvantages of other techniques such as determination of weight lossor height difference were overcome, achieving high accuracy and reproducibility.
PB Beilstein-Institut
YR 2020
FD 2020
LK http://riull.ull.es/xmlui/handle/915/21302
UL http://riull.ull.es/xmlui/handle/915/21302
LA en
NO OSRAM Opto Semiconductors GmbH
DS Repositorio institucional de la Universidad de La Laguna
RD 26-abr-2024