RT info:eu-repo/semantics/conferenceObject T1 Upgraded metallurgical grade Silicon for Solar Cell fabrication A1 Hernández Rodríguez, Cecilio A1 Díaz Herrera, B. A1 Jiménez-Rodriguez, E. A1 González Díaz, B. A1 Rinio, M. A1 Borcher, D. A1 Guerrero Lemus, Ricardo A2 Física A2 Energías Renovables y Óptica K1 UMG, Silicon, Gettering, Diffusion, Annealing, Solar cells AB This paper discusses the gettering process during emitter diffusion in upgraded metallurgical grade(UMG) silicon and the effect of a subsequent low temperature annealing (LTA) which is proven to be a suitablemethod to increase the cell lifetime and efficiency according to recent studies from other authors. Neighboring wafersof the same ingot were selected to be processed and characterized by means of μW-PCD lifetime measurements. Anincrease in minority carrier lifetime by a factor of 3.8 is obtained after the phosphorus gettering, although noimprovement due to the LTA process in these wafers was observed. YR 2009 FD 2009 LK http://riull.ull.es/xmlui/handle/915/41420 UL http://riull.ull.es/xmlui/handle/915/41420 LA en NO 24th EUPVSEC, 2009, 1934-1936 DS Repositorio institucional de la Universidad de La Laguna RD 15-feb-2025